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H360(Z)

FEATURES

High Tg: ≥200℃ (DMA)

Low Dk:≤3.7,10GHz

Low Df:≤0.0047, 10GHz

Excellent thermal resistance, Td≥340℃

Low Z axis CTE

Low water absorption, excellent anti-CAF, high reliability

Compatible with Lead-free


APPLICATIONS

Server

Switch

Base station

Optical module

Millimeter wave radar for Automotive

High performance computing


GENERAL PROPERTIES

Item

Test Condition

Unit

Spec

Typical value

TG

TMA

≥185

190

DMA

≥200

215

Peel Strength 1oz Very

low profile copper

RTF

As Received

N/mm

≥0.53

0.70

HVLP

As Received

N/mm

N/m

≥0.53

0.65

Thermal stress

288, solder dip

S

>10

>180s No delamination

Flexural Strength

LW

N/m

≥345

525

CW

≥345

485

Flammability

E 24/125

-

UL94V-0

V-0

Surface Resistivity

After moisture

≥1.0x105

1.56x108

Volume Resistivity

After moisture

MΩ·cm

≥1.0x106

2.21x109

Dielectric Constant (Rc54%)

10GHZ C 24/23/50

-

≤3.7

3.65

Loss Tangent(RC54%)

10GHZ C 24/23/50

-

≤0.0047

0.0045

Arc Resistance

D 48/50+D 0.5/23

S

≥60

120

Dielectric Breakdown

D 48/50+D 0.5/23

KV

≥40

60

Moisture Absorption

D 24/23

%

≤0.2

0.08

Td

Weight Loss 5%

≥340

408

CTE in XY/Z Axis

Alpha1

TMA

 

ppm/

≤45

35

Alpha2

ppm/

≤280

203

50 - 260°C

%

2.8

2.0

T288(Unclad)

TMA

min

≥15

>60

T300(Unclad)

TMA

min

2

>60








 

u  Specimen thickness :0.762mm

u  Specification sheet:IPC-4101E/102,is for your reference only.

u  Explanation: C: Humidity conditioning D: Immersion conditioning in distilled water

E: Temperature conditioning